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燃烧化学沉积纳米α- Al₂O₃薄膜及晶化处理

张增志 , 付跃文 , 周有强

无机材料学报

提出了沉积纳米陶瓷薄膜的一种新方法一燃烧化学沉积法．该方法省去了真空条件；直接在空气中沉积纳米陶瓷薄膜．其主要特点是将配制好的初始液体雾化，让该液雾穿过高温火焰流体．初始液体在火焰流中发生化学反应，并形成反应火焰流，该反应火焰流体系在火焰流的前方基底上沉积出纳米陶瓷薄膜，然后再通过热处理进行晶化处理，使形成晶态相．本文以制备 α－Ａｌ_２Ｏ_３纳米薄膜为例，介绍用该方法的制备过程，并用ＳＥＭ和 ＴＥＭ分析了。α－Ａｌ_２Ｏ_３纳米薄膜的显微形貌和结构．

关键词: 纳米陶瓷 , combustion chemistry , deposition , α-Al₂O₃

工艺参数对a-CN_x膜沉积的影响

肖兴成 , 江伟辉 , 宋力昕 , 田静芬 , 胡行方

无机材料学报

研究了基本工艺参数对磁控溅射制备无定形氮化碳（ａ－ＣＮ_x）薄膜沉积的影响．实验结果表明：Ｎ_２流量的增加提高了膜的沉积速率，同时提高了膜中氮含量．溅射功率的提高增加了沉积速率．偏压对硬质膜的制备是一关键的工艺参数，它不仅使薄膜致密、表面光滑，而且还可以提高膜中的Ｎ含量．

关键词: a－CN_x膜 , processing parameters , deposition

PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THIN FILMS BY LOW PRESSURE MOCVD

W.J. Li , Z.M. Wu , J.F. Zhao , Z.H. Wu , X.L.Zhao and B.C. Cai ( Information Storage Research Center , Shanghai Jiaotong University , Shanghai 200030 , China , College of Chemical Engineering & Technology , Taiyuan University of Technology , Taiyuan 030024 , China)

金属学报(英文版)

Titanium dioxide thin films were prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from titanium IV isopropoxide. Nitrogen was used as a carrier gas for the titanium precursor,and oxygen as a reactant gas. The deposition rates of the films have been studied as functions of process parameters such as sabstrate temperature and oxygen flow rote. Structural evolution of the films has been studied as functions of substrate temperature (110 to 700℃) and annealing temperature. The films have been characterized by X-ray dissection and by Raman scattering. Films deposited onto Si(100) substrates were amorphous at 110-250℃, anatase at 350- 550℃ and rutile above 650℃. The films deposited at substrate temperatures less than 550℃ and annealed at 600℃ for two hours were annealed, annealed at 700℃ for two hours were mixtures of anatase and rutile, and annealed at 850℃ for two hours were rutile.

关键词: MOCVD , null , null , null , null

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